Product Summary

The K9F1208U0B-PCBO is a 64M x 8 Bit NAND Flash Memory. The K9F1208U0B-PCBO is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins of the K9F1208U0B-PCBO serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Parametrics

K9F1208U0B-PCBO absolute maximum ratings: (1)Voltage on any pin relative to VSS: VIN/OUT:-0.6V to +4.6V, VCC: -0.6V to +4.6V, VCCQ:-0.6V to +4.6V; (2)Temperature Under Bias:-10℃ to +125℃; (3)Storage Temperature:-65℃ to +150℃; (4)Short Circuit Current:5 mA.

Features

K9F1208U0B-PCBO features: (1)Voltage Supply:2.7V to 3.6V; (2)Organization: Memory Cell Array: (64M + 2048K)bit x 8 bit, Data Register:(512 + 16)bit x 8bit; (3)Automatic Program and Erase: Page Program : (512 + 16)Byte, Block Erase : (16K + 512)Byte; (4)Page Read Operation: Page Size: (512 + 16)Byte, Random Access: 15ms(Max.), Serial Page Access: 50ns(Min.); (5)Fast Write Cycle Time: Program time: 200ms(Typ.), Block Erase Time: 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port Hardware Data Protection: Program/Erase Lockout During Power Transitions; (7)Reliable CMOS Floating-Gate Technology: Endurance: 100K Program/Erase Cycles, Data Retention: 10 Years; (8)Command Register Operation; (9)Intelligent Copy-Back ; (10)Unique ID for Copyright Protection.

Diagrams

K9F1208U0B-PCBO block diagram

K9F1208D0A
K9F1208D0A

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K9F1208Q0A-XXB0
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K9F1208Q0B
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K9F1208R0B
K9F1208R0B

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K9F1208U0A
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K9F1208U0A-VCB0
K9F1208U0A-VCB0

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