Product Summary
The BTS5215LN’s channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. It provids embedded protective functions.
Parametrics
Absolute maximum ratings: (1)Supply voltage (overvoltage protection): 43 V; (2)Supply voltage for full short circuit protection Tj,start =-40 to +150℃: 36 V; (3)Load current (Short-circuit current): self-limited; (4)Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V; (5)RI2) = 2 Ω, td = 400 ms; IN= low or high, each channel loaded with RL = 13.5 Ω: 60 V; (6)Operating temperature range: -40 to +150 ℃; (7)Storage temperature range: -55 to +150 ℃.
Features
Features: (1)Very low standby current; (2)CMOS compatible input; (3)Improved electromagnetic compatibility (EMC); (4)Fast demagnetization of inductive loads; (5)Stable behaviour at undervoltage; (6)Wide operating voltage range; (7)Logic ground independent from load ground.
Diagrams
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![]() BTS50050-1EGA |
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![]() BTS50055-1TMA |
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![]() BTS50055-1TMB |
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![]() BTS50055-1TMC |
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![]() BTS50060-1EGA |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN HIC-PROFET |
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![]() BTS50060-1TEA |
![]() Infineon Technologies |
![]() Power Switch ICs - POE / LAN Smart Hi-Side Pwr SW 1 Channel |
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