(China (Mainland))
Product Summary
The K9WAG08U1A-PIBO is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation of K9WAG08U1A-PIBO can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins of K9WAG08U1A-PIBO serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Parametrics
K9WAG08U1A-PIBO absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to +4.6 V, VIN: -0.6 to +4.6 V, VI/O: -0.6 to Vcc+0.3 V (<4.6V); (2)Temperature Under Bias: -40 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current: 5 mA.
Features
K9WAG08U1A-PIBO features: (1)Voltage Supply: 2.70V ~ 3.60V; (2)Organization: Memory Cell Array : (1G + 32M) x 8bit, Data Register : (2K + 64) x 8bit; (3)Automatic Program and Erase: Page Program : (2K + 64)Byte, Block Erase : (128K + 4K)Byte; (4)Page Read Operation: Page Size : (2K + 64)Byte, Random Read : 25μs(Max.), Serial Access : 25ns(Min.); (5)Fast Write Cycle Time: Page Program time : 200μs(Typ.), Block Erase Time : 1.5ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology.
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K9WAG08U1A-PCBO |
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K9WAG08U1M |
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