(China (Mainland))
Product Summary
BTS716G’s N channel vertical power MOSFET is with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. It provides embedded protective functions.
Parametrics
Absolute maximum ratings: (1)Supply voltage (overvoltage protection: 43 V; (2)Supply voltage for full short circuit protection Tj,start =-40 to +150℃: 36 V; (3)Load current (Short-circuit current: self-limited; (4)Load dump protection VLoadDump = VA + Vs, VA = 13.5 V; (5)RI = 2 Ω, td = 400 ms; IN= low or high,; (6)each channel loaded with RL = 13.5 Ω: 60 V; (7)Operating temperature range: -40 to +150 ℃; (8)Storage temperature range: -55 to +150 ℃.
Features
Features: (1)Very low standby current; (2)CMOS compatible input; (3)Improved electromagnetic compatibility (EMC); (4)Fast demagnetization of inductive loads; (5)Stable behaviour at undervoltage; (6)Wide operating voltage range; (7)Logic ground independent from load ground.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BTS716G |
Infineon Technologies |
Power Switch ICs - POE / LAN Smart High Side PROFET Quad |
Data Sheet |
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BTS716GB |
Infineon Technologies |
Power Switch ICs - POE / LAN SMART HI SIDE PWR SWITCH INDUSTRY APP |
Data Sheet |
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BTS716GT |
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SWITCH 4-CHAN HIGH SIDE P-DSO20 |
Data Sheet |
Negotiable |
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